MIT Department: Electrical Engineering and Computer Science
Undergraduate Institution: University of Puerto Rico, Mayaguez
Faculty Mentor: Jesus del Alamo
Research Supervisor: Alon Vardi
My name is Gabriel Enrique Colón Reyes and I am from San Juan, Puerto Rico. I currently major in electrical engineering at the University of Puerto Rico, MayagÃ¼ez. My interests include a passion for power electronics and control systems with applications to renewable energy. My goals include pursuing a Ph.D. in these areas to return to Puerto Rico as a professor and educate future generations of engineers. As a professor I also aspire to contribute and aid the development of Puerto Rico. In my free time I enjoy video games and sports, as well as drinking coffee and enjoying time with friends.
2017 Research Abstract
Increasing Transconductance of Indium-Gallium-Arsenide Fin Field-Effect Transistors after Sequential Annealing
Gabriel E. Colón Reyes, Department of Electrical and Computer Engineering, University of Puerto Rico, Mayagüez
Alon Vardi, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology
Jesús del Álamo, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology
Transistors are semiconductor devices that are used in our everyday technology as logical operators. The metal oxide semiconductor field-effect transistor (MOSFET) is a three-terminal device that allows current to flow from its source-terminal to its drain-terminal when controlling the gate voltage. However, as we make the devices smaller, the channel length between a source and drain shortens, resulting in poorer gate-terminal control. To mitigate this, a new architecture called FinFET was designed to perform better at shorter channel lengths. There exists a need to understand the behavior of FinFETs at a deeper degree to design more efficient transistors. This project compared the different performances of FinFETs before and after being sequentially annealed at 250⁰C, 300⁰C and 350⁰C for one minute. It was found that some devices’ transconductances (gm) increased as the device was annealed at a higher temperature. One device yielded gm = 1355[µS/µm] when measured fresh, gm = 1672[µS/µm] at 250⁰C, gm = 1982[µS/µm] at 300⁰C and gm = 1671[µS/µm] at 350⁰C. This means that device performance improved until 300⁰C. There was no increase in gate leakage current nor single-fin transistor transconductance as a result of annealing. This suggests annealing improved the extrinsic part of the device with negligible effect on the MOS interface. Future work includes further studies of these devices to understand their behavior when exposed to higher temperatures resulting in physical and chemical changes, as well as exploring devices with distinct design parameters to continue designing more efficient transistors.