Electrical engineering and computer science graduate student Donghyun Jin was awarded the ISPSD ’12 Charitat Award-Runner-up at the 24th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), which took place June 3-7 in Bruges, Belgium. Jin was cited for a paper titled “Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs.”
Jin is a graduate student in Jesús del Alamo’s research group at the Microsystems Technology Laboratories at MIT. His research is motivated by the global interest and need for a new generation of ultra-efficient power transistors for electrical power management. Gallium nitride (GaN) is a semiconductor material with a wide band gap, affording it special properties for optoelectronics, high-power and high-frequency device applications. GaN transistors are being investigated for a new generation of electrical power management systems in everyday electronics such as personal computers, home appliances and electric cars. Worldwide energy demand continues to drive the need for far greater efficiency in all of these applications. Read more about his research on MITnews.